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Journal paper

  • Electric field effect dominated bipolar resistive switching through interface control in a Pt/TiO2/TiN structure

    Dong-Hyeok Lim, Ga-Yeon Kim, Jin-Ho Song, Kwang-Sik Jeong, Dong-Chan Kim, Seok-Woo Nam, mann-ho cho, Tae-Geol Lee

    RSC ADVANCES, v.5, no.1, pp.221-230

    2015.01

  • Structural evolution and defect control of yttrium-doped ZrO2 films grown by a sol-gel method

    Kwang Sik Jeong, Jinho Song, Donghyeok Lim, Myung Soo Lee, Hyoungsub Kim, mann-ho cho

    APPLIED SURFACE SCIENCE, v.320, pp.128-137

    2014.11

  • Electronic structure of low work function electrodes modified by C16H33SH

    Lee, H (Lee, Hyunbok), Sang Wan Cho, Park, SH (Park, Sang Han), mann-ho cho, Yeonjin Yi

    MATERIALS RESEARCH BULLETIN, v.58, no.Special SI, pp.19-23

    2014.10

  • Non-toxically enhanced sulfur reaction for formation of chalcogenide thin films using a thermal cracker

    Cho, D.-H. , Lee, W.-J., Park, S.-W., Wi, J.-H., Han, W.S., Kim, J., mann-ho cho, Kim, D., Chung, Y.-D.

    JOURNAL OF MATERIALS CHEMISTRY A, v.2, no.35, pp.14593-14599

    2014.09

  • Defect-free erbium silicide formation using an ultrathin Ni interlayer

    Choi, J., Choi, S., Kang, Y.-S., Na, S., Lee, H.-J., mann-ho cho, Kim, H.

    ACS APPLIED MATERIALS & INTERFACES, v.6, no.16, pp.14712-14717

    2014.08

  • The effect of Al2O3 passivation layer in pulsed-laser-deposited ZrO2 films on n-GaAs substrate as a function of post-annealing temperature

    Chae, J., Kim, H.-J., Park, S.H., Sang Wan Cho, mann-ho cho

    THIN SOLID FILMS, v.558, pp.215-220

    2014.05

  • Only the chemical state of Indium changes in Mn-doped In3Sb1Te2 (Mn: 10 at.%) during multi-level resistance changes

    Lee Y.M., Ahn, D., Kim, J.-Y., Kim Y.S., Cho S., Ahn M., mann-ho cho, Jung M.S., Choi D.K., Jung, M.-C., Qi Y.B.

    SCIENTIFIC REPORTS, v.4, pp.4702-4702

    2014.04

  • Structural deformation and void formation driven by phase transformation in the Ge2Sb2Te5 film

    Park, S.J., Ahn, M., Jeong, K., Jang, M.H., mann-ho cho, Song, J.Y., DAE HONG KO, Ahn, D.-H., Nam, S.-W., Jeong, G.

    JOURNAL OF MATERIALS CHEMISTRY C, v.2, no.11, pp.2001-2009

    2014.03

  • Effects of nitrogen incorporation in HfO2 grown on InP by atomic layer deposition: An evolution in structural, chemical, and electrical characteristics

    Kang, Y.-S., Kim, D.-K., Kang, H.-K., Jeong, K.-S., mann-ho cho, DAE HONG KO, Kim, H., Seo, J.-H., Kim, D.-C.

    ACS APPLIED MATERIALS & INTERFACES, v.6, no.6, pp.3896-3906

    2014.03

  • High concentration of nitrogen doped into graphene using N-2 plasma with an aluminum oxide buffer layer

    Park, SH (Park, Sang Han), Chae, J (Chae, Jimin), mann-ho cho, Kim, JH (Kim, Joo Hyoung), Kyung-hwa Yoo, Sang Wan Cho, Kim, TG (Kim, Tae Gun), Kim, JW (Kim, Jeong Won)

    JOURNAL OF MATERIALS CHEMISTRY C, v.2, no.5, pp.933-939

    2014.02