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Journal paper

  • Hydrogen sensing under ambient conditions using SnO2 nanowires: Synergetic effect of Pd/Sn codeposition

    Seung Ho Jeong, Sol Kim, Junho Cha, Min Soo Son, Sang Han Park, Ha-Yeong Kim, mann-ho cho, Myung-Hwan Whangbo, Kyung-hwa Yoo, Sung-Jin Kim

    NANO LETTERS, v.13, no.12, pp.5938-5943

    2013.12

  • Synthesis of self-ordered Sb2Te2 films with atomically aligned Te layers and the effect of phonon scattering modulation

    최혜진, 백주혁, 김태현, 송재용, 신상우, HYUNG HEE CHO, DAE HONG KO, Jin-Sang Kim, KwangHo JEONG, mann-ho cho

    JOURNAL OF MATERIALS CHEMISTRY C, v.1, no.42, pp.7043-7053

    2013.11

  • Interfacial reaction induced strain relaxation in Hf-silicate film on strained Si0.7Ge0.3 (001) as a function of annealing temperature

    김대경, 강유선, 강항규, mann-ho cho, DAE HONG KO, 이선영, 김동찬, 김창수, 서정혜

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.210, no.11, pp.2499-2502

    2013.11

  • Control of the interfacial reaction in HfO2 on Si-passivated GaAs

    Park, SH (Park, Sang Han), Kang, YS (Kang, Yu Seon), Chae, J (Chae, Jimin), Kim, HJ (Kim, Hyo Jin), mann-ho cho, DAE HONG KO, Byun, YC (Byun, Young-Chul), Kim, H (Kim, Hyoungsub), Sang Wan Cho, Kim, CY (Kim, Chung Yi), Seo, JH (Seo, Jung-Hye)

    APPLIED SURFACE SCIENCE, v.283, pp.375-381

    2013.10

  • Effect of SiO2 tunnel layer processes on the characteristics of MONOS charge trap devices with poly-Si channels

    Heedo Na, Jinho Oh, Kyumin Lee, Jonggi Kim, Sunghoon Lee, Dong Hyeok Lim, mann-ho cho, HYUNCHUL SOHN

    Microelectronic Engineering, v.110, pp.6-11

    2013.10

  • The effect of structural and chemical bonding changes on the optical properties of Si/Si1-xCx core/shell nanowires

    이우정, 마진원, 배정민, 정광식, mann-ho cho, 이철, Eun Jip Choi, 강철

    JOURNAL OF MATERIALS CHEMISTRY C, v.1, no.34, pp.5207-5215

    2013.09

  • Change in crystalline structure and band alignment in atomic-layer-deposited HfO2 on InP using an annealing treatment

    Kang, YS, Kim, DK, mann-ho cho, Seo, JH, Shon, HK, Lee, TG, Cho, YD, Kim, SW, DAE HONG KO, Kim, H

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.210, no.8, pp.1612-1617

    2013.08

  • Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures

    An, C.-H., Mahata, C., Byun, Y.-C., Lee, M.S., Kang, Y.S., mann-ho cho, Kim, H.

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.210, no.7, pp.1381-1385

    2013.07

  • Strongly enhanced THz emission caused by localized surface charges in semiconducting germanium nanowires

    Woo-Jung Lee, Jin Won Ma, Jung Min Bae, Kwang-Sik Jeong, mann-ho cho, Chul Kang, Jung-Sub Wi

    SCIENTIFIC REPORTS, v.3, no.1984, pp.1-9

    2013.06

  • The diffusion of silicon atoms in stack structures of La2O3 and Al2O3

    Lee, WJ (Lee, W. J.), Ma, JW (Ma, J. W.), Bae, JM (Bae, J. M.), Kim, CY (Kim, C. Y.), Jeong, KS (Jeong, K. S.), mann-ho cho, Chung, KB (Chung, K. B.), Kim, H (Kim, H.), Cho, HJ (Cho, H. J.), Kim, DC (Kim, D. C.)

    Current Applied Physics, v.13, no.4, pp.633-639

    2013.06