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Journal paper

  • Thermal instability of HfO2 on InP structure with ultrathin Al2O3 interface passivation layer

    An, CH (An, Chee-Hong), Byun, YC (Byun, Young-Chul), mann-ho cho, Kim, H (Kim, Hyoungsub)

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.6, no.6, pp.247-249

    2012.06

  • Effect of nitrogen incorporation and oxygen vacancy on electronic structure and the absence of a gap state in HfSiO films

    Jang, M.H., Jeong, K.S., Chung, K.B., Lee, J.W., Myeung Hee Lee, mann-ho cho

    SURFACE SCIENCE, v.606, pp.L64-L68

    2012.06

  • Effect of amorphization on the structural stability and reversibility of Ge2Sb2Te5 and oxygen incorporated Ge2Sb2Te5 films

    Park, SJ (Park, Seung Jong), Jang, MH (Jang, Moon Hyung), Park, SJ (Park, Sung Jin), Ahn, M (Ahn, Min), Park, DB (Park, Dam Bi), DAE HONG KO, mann-ho cho

    JOURNAL OF MATERIALS CHEMISTRY, v.22, no.32, pp.16527-16533

    2012.06

  • Change of Resistive-switching in TiO2 Films with Additional HfO2 Thin Layer

    Lee, DS (Lee, Doosung), Sung, YH (Sung, Yonghun), Sohn, HC (Sohn, Hyunchul), Ko, DH (Ko, Dae-Hong), Cho, MH (Cho, Mann-Ho)

    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.60, no.9, pp.1313-1316

    2012.05

  • High-mobility Property of Crystallized In-Te Chalcogenide Materials

    Park, SJ (Park, Sung Jin), Park, SJ (Park, Seung-Jong), Park, D (Park, Dambi), An, M (An, Min), mann-ho cho, Kim, J (Kim, Jonggi), Na, H (Na, Heedo), Park, SH (Park, Sung Hoon), HYUNCHUL SOHN

    ELECTRONIC MATERIALS LETTERS, v.8, no.2, pp.175-178

    2012.04

  • The oxidation characteristics of silicon nanowires grown with an Au catalyst

    Bae, JM (Bae, Jung Min), Lee, WJ (Lee, Woo Jung), Ma, JW (Ma, Jin Won), mann-ho cho, Ahn, JP (Ahn, Jae Pyung), Lee, HS (Lee, Hong Seok)

    NANO RESEARCH, v.5, no.3, pp.152-163

    2012.03

  • Phase Transformation of Alternately Layered Bi/Se Structures to Well-Ordered Single Crystalline Bi2Se3 Structures by a Self-Organized Ordering Process

    Kim, TH (Kim, Tae-Hyeon), Baeck, JH (Baeck, Ju Heyuck), Choi, H (Choi, Hyejin), KwangHo JEONG, mann-ho cho, Kim, BC (Kim, B. C.), Jeong, KT (Jeong, K. T.)

    JOURNAL OF PHYSICAL CHEMISTRY C, v.116, no.5, pp.3737-3746

    2012.02

  • Thermal Stability of ALD-HfO2/GaAs Pretreated with Trimethylaluminium

    Byun, YC (Byun, Young-Chul), An, CH (An, Chee-Hong), Lee, SH (Lee, Seok-Hee), mann-ho cho, Kim, H (Kim, Hyoungsub)

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.159, no.1, pp.6-10

    2012.01

  • Interfacial Reactions between HfO2 Films Prepared by Atomic-Layer-Deposition and an InP Substrate Using Postnitridation with NH3 Vapor

    Kang, YS (Kang, Y. S.), Kim, CY (Kim, C. Y.), mann-ho cho, An, CH (An, C. -H.), Kim, H (Kim, H.), Seo, JH (Seo, J. H.), Kim, CS (Kim, C. S.), Lee, TG (Lee, T. G.), DAE HONG KO

    ELECTROCHEMICAL AND SOLID STATE LETTERS, v.15, no.4, pp.G9-G11

    2012.01

  • The modulation of Si1-xGex nanowires by correlation of inlet gas ratio with H-2 gas content

    Lee, WJ (Lee, Woo-Jung), Ma, JW (Ma, Jin Won), Bae, JM (Bae, Jung Min), Park, SH (Park, Sang Han), Cho, MH (Cho, Mann-Ho), Ahn, JP (Ahn, Jae Pyung)

    CRYSTENGCOMM, v.13, no.16, pp.5204-5211

    2011.08