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Journal paper

  • Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O-2 with Different (NH4)(2)S Cleaning Time

    Byun YC (Byun, Young-Chul), An CH (An, Chee-Hong), Choi JY (Choi, Ju Yun), Kim CY (Kim, Chung Yi), mann-ho cho, Kim H (Kim, Hyoungsub)

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.6, pp.141-145

    2011.04

  • The Phase Change Effect of Oxygen-Incorporation in GeSbTe Films

    Jang MH (Jang, Moon Hyung), Park SJ (Park, Seung Jong), Lim DH (Lim, Dong Hyeok), Park SJ (Park, Sung Jin), mann-ho cho, DAE HONG KO,, Cho SJ (Cho, Seong Jin)

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.5, pp.471-476

    2011.03

  • Effects of Interface Al2O3 Passivation Layer for High-k HfO2 on GaAs

    Suh, DC, Cho, YD, DAE HONG KO,, Yongshik Lee, Chung, KB, mann-ho cho

    ELECTROCHEMICAL AND SOLID STATE LETTERS, v.14, no.2, pp.H63-H65

    2011.02

  • The effect of ZnO surface conditions on the electronic structure of the ZnO/CuPc interface

    Park SH (Park, Sang Han), Kim HJ (Kim, Hyo Jin), mann-ho cho, Yeonjin Yi, Cho SW (Cho, Sang Wan), Yang J (Yang, Jaehyun), Kim H (Kim, Hyoungsub)

    APPLIED PHYSICS LETTERS, v.98, no.8, pp.082111-1-082111-3

    2011.02

  • Changes in Electronic Structure of LaxAlyO Films as a Function of Postdeposition Annealing Temperature

    Ma JW (Ma, J. W.), Lee WJ (Lee, W. J.), mann-ho cho, Chung KB (Chung, K. B.), An CH (An, C. -H.), Kim H (Kim, H.), Cho YJ (Cho, Y. J.), Moon DW (Moon, D. W.), Cho HJ (Cho, H. J.)

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.3, pp.79-82

    2011.01

  • Effects of hydrogen on Au migration and the growth kinetics of Si nanowires

    Woo-Jung Lee, Jinwon Ma, Jungmin Bae, mann-ho cho, Jae Pyung Ahn

    CRYSTENGCOMM, v.13, no.2, pp.690-696

    2011.01

  • Growth of amorphous silicon oxide nanowires in the absence of a Si precursor through a solid state transformation

    Song, J. , Lim, D.H. , Oh, E.S. , Cho, M-H. , Ann, J.P. , Kim, J.G. , Sohn, H.C. , Ko, D.

    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.57, no.6, pp.1467-1471

    2010.12

  • Relaxation of misfit strain in silicon-germanium (Si1-xGe x) films during dry oxidation

    Yoo, J.-H. , Kim, S.-W. , Min, B.-G. , Sohn, H. , Ko, D.-H. , Cho, M.-H.

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.28, no.6, pp.1298-1303

    2010.11

  • Thickness dependence on crystalline structure and interfacial reactions in HfO2 films on InP (001) grown by atomic layer deposition

    Kang, Y.S., Kim, C.Y., Cho, M.-H. , Chung, K.B., An, C.-H., Kim, H., Lee, H.J., Kim, C.S., Lee, T.G.

    Applied Physics Letters, v.97, no.17, pp.0-0

    2010.10

  • Performance Improvement of the Organic Light-Emitting Diodes by Using a LiF/Pyromellitic Dianhydride Stacked Cathode Interfacial Layer

    Nam, E (Nam, Eunkyoung), Moon, MR (Moon, Mi Ran), Jung, D (Jung, Donggeun), Lee, S (Lee, Sungwoo), Chae, H (Chae, Heeyeop), Cho, JH (Cho, Jae Hyun), Yi, J (Yi, Junsin), Park, SH (Park, Sang Han), Cho, MH (Cho, Mann-Ho), Kim, H (Kim, Hyoungsub)

    Journal of The Electrochemical Society, v.157, no.12, pp.425-428

    2010.10