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Journal paper

  • The interfacial Electronic Structure of Fullerene/Ultra Thin Dielectrics of SiO2 and SiON

    S.W. Cho, Y. Yi, K.B. Chung, S.J. Kang, mann-ho cho

    Chemical Physics Letters, v.499, pp.136-140

    2010.10

  • The origin of the resistance change in GeSbTe films

    Moon Hyung Jang, Seung Jong Park, Sung Jin Park, mann-ho cho, E. Z. Kurmaev, L. D. Finkelstein, Gap Soo Chang

    Applied Physics Letters, v.97, no.15, pp.152113-152113

    2010.10

  • Effect of Bonding Characteristics on the Instability of GexSb1-x Films

    Park, SJ (Park, S. J.), Jang, MH (Jang, M. H.), Park, SJ (Park, Sung-Jin), Cho, MH (Cho, M. -H.), Kim, JK (Kim, J. K.), Ko, DH (Ko, D. -H.), Sohn, HC (Sohn, H. C.)

    Journal of The Electrochemical Society, v.157, no.12, pp.1078-1081

    2010.10

  • Effect of interfacial reactions between atomic-layer-deposited HfO2 films and n-GaAs (100) substrate using postnitridation with NH3 vapor

    C. Y. Kim, Y. S. Kang, S. Y. Lee, mann-ho cho, K. B. Chung, H. Kim, S. Na, H. J. Lee, H. J. Yun

    Applied Physics Letters, v.97, no.9, pp.092113-092113

    2010.08

  • The Effects of Postannealing Treatment in Forming Gas on Low-k SiOC(H) Film

    Park, SH (Park, S. H.), Kim, HJ (Kim, H. J.), Cho, MH (Cho, M. -H.), Ko, DH (Ko, D. -H.), Sohn, HC (Sohn, H. C.), Hahn, JH (Hahn, J. H.), Lee, DH (Lee, D. -H.), Kwon, YS (Kwon, Y. S.), Park, SY (Park, S. -Y.), Kim, MS (Kim, M. -S.)

    Journal of The Electrochemical Society, v.157, no.8, pp.183-186

    2010.06

  • Enhancement of Thermal Stability in Ni Silicides on Epi-Si1-xCx by Pt Addition

    Yoo JH (Yoo, J. -H.), HYUNCHUL SOHN, DAE HONG KO,, mann-ho cho

    Journal of The Electrochemical Society, v.157, no.8, pp.837-841

    2010.06

  • TEM Study on Volume Changes and Void Formation in Ge2Sb2Te5 Films, with Repeated Phase Changes

    Do, K, Lee, D, DAE HONG KO,, HYUNCHUL SOHN, mann-ho cho

    ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.8, pp.H284-H286

    2010.06

  • Improved thermal stability of Al2O3 /HfO2/Al2O3 high-k gate dielectric stack on GaAs

    Dong Chan Suh, Young Dae Cho, Sun Wook Kim, DAE HONG KO,, Yongshik Lee, mann-ho cho, Jungwoo Oh

    Applied Physics Letters, v.96, no.14, pp.142112-1-142112-3

    2010.04

  • Effects of oxygen incorporation in GeSbTe films on electrical properties and thermal stability

    Jang, MH (Jang, Moon Hyung), Park, SJ (Park, Seung Jong), Lim, DH (Lim, Dong Hyeok), Park, SJ (Park, Sung Jin), Cho, MH (Cho, Mann-Ho), Cho, SJ (Cho, Seong Jin), Cho, YH (Cho, Yoon Ho), Lee, JH (Lee, Jong-Heun)

    Applied Physics Letters, v.96, no.9

    2010.03

  • Change in Band Alignment of Nitrided Hf-Silicate Films Grown on Ge(001) Using Gaseous NH3

    Cho, YJ (Cho, Y. J.), Mah, JW (Mah, J. W.), Kim, CY (Kim, C. Y.), Kim, H (Kim, H.), Lee, HJ (Lee, H. J.), Kang, HJ (Kang, H. J.), Moon, DW (Moon, D. W.), Kim, SO (Kim, S-O), Cho, MH (Cho, M-H)

    ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.5, pp.33-36

    2010.02