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Journal paper

  • Effect of In incorporated into SbTe on phase change characteristics resulting from changes in electronic structure

    Jang, MH, Park, SJ, Lim, DH, Park, SJ, mann-ho cho, DAE HONG KO,, Heo, MY, HYUNCHUL SOHN, Kim, SO

    Applied Physics Letters, v.96, no.5, pp.052112-1-052112-3

    2010.02

  • Behavior of Strain at a Thin Ge Pile-up Layer Formed by Dry Oxidation of a Si0.7Ge0.3 Film

    Byoung Gi Min , Jeong Ho Yoo , HYUNCHUL SOHN, DAE HONG KO,, mann-ho cho, K.-B. Chung, T.-W. Lee

    Thin Solid Films, v.518, no.8, pp.2065-2069

    2010.02

  • The electronic structure of C60/ZnPc interface for organic photovoltaic device with blended layer architecture

    Park, SH, Jeong, JG, Kim, HJ, mann-ho cho, Cho, SW, Yi, Y, Heo, MY, HYUNCHUL SOHN

    Applied Physics Letters, v.96, pp.013302-1-013302-3

    2010.02

  • Crystallization Behaviors of Laser induced Ge2Sb2Te5 in Different Amorphous State

    KI HOON DO, DO KYU LEE, HYUNCHUL SOHN, mann-ho cho, DAE HONG KO

    Journal of The Electrochemical Society, v.157, no.3, pp.H264-H267

    2010.01

  • Changes in Gd2O3 films grown on Si(100) as a function of nitridation temperature and Zr incorporation

    W.J. Lee, mann-ho cho, Y.K. Kim, J.H.Baeck, I.S.Jeong, KwangHo JEONG, K.B. Chung, S.Y.Kim, DAE HONG KO

    Thin Solid Films, v.518, no.6, pp.1682-1688

    2010.01

  • The effect of copper hexadecafluorophthalocyanine (F16CuPc) inter-layer on pentacene thin-film transistors

    J.H.Park, S.W.Cho, S.H.Park, J.G.Jeong, H.J.Kim, Y.Yi, mann-ho cho

    Synthetic Metals, v.160, pp.108-112

    2010.01

  • Electronic Structure of Te/Sb/Ge and Sb/Te/Ge Multi Layer Films Using Photoelectron Spectroscopy

    Baeck, JH, Ann, YK, KwangHo JEONG, mann-ho cho, DAE HONG KO,, Oh, JH, Jeong, H

    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.131, pp.13634-13638

    2009.09

  • The Effect of NH3 on the Interface of HfO2 and Al2O3 Films on GaAs(100) Surfaces

    Suh, DC, Cho, YD, Yongshik Lee, DAE HONG KO,, Chung, KB, mann-ho cho

    Electrochemical And Solid State Letters, v.12, no.10, pp.H376-H377

    2009.08

  • Phase change behavior in oxygen-incorporated Ge2Sb2Te5 films

    M. H. Jang, S. J. Park, D. H. Lim, mann-ho cho, K. H. Do, DAE HONG KO,, H. C. Sohn

    Applied Physics Letters, v.95, pp.012102-1-012102-3

    2009.07

  • Changes in the structure of an atomic-layer-deposited HfO2 film on a GaAs (100) substrate as a function of postannealing temperature

    Kim, CY, Cho, SW, mann-ho cho, Chung, KB, Suh, DC, DAE HONG KO,, An, CH, Kim, H, Lee, HJ

    Applied Physics Letters, v.95, pp.042903-1-042903-3

    2009.06