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Journal paper

  • Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry

    Cho, M. -H., Kim, C. Y., Moon, K., Chung, K. B., Yim, C. J., DAE HONG KO,, Sohn, H. C., Jeon, Hyeongtag

    Journal of Chemical Physics, v.129, pp.034705-034705

    2008.07

  • The characteristics and interfacial electronic structures of organic thin film transistor devices with ultrathin (HfO2)x(SiO 2)1-x gate dielectrics

    Cho, S.W. , Jeong, J.G. , Park, S.H. , mann-ho cho, KwangHo JEONG, WHANG, Chung Nam, Yi, Y.

    Applied Physics Letters, v.92, no.21, pp.0-0

    2008.07

  • Effects of reoxidation on band alignment in N-incorporated SiON films as a function of sequential thermal annealing in NO and N H3

    Lee, W.J. , cho mann-ho, Chung, K.B. , Lee, Y.S. , Kim, D.C. , Choi, S.Y. , Chung, U.I. , Moon, J.T.

    Applied Physics Letters, v.93, no.1, pp.012901-012901

    2008.07

  • Thermal annealing effects on the atomic layer deposited LaAlO3 thin films on Si substrate

    Eom, Dail, Hwang, Cheol Seong, Kim, Hyeong Joon, Cho, Mann-Ho, Chung, K. B.

    Electrochemical and Solid State Letters, v.11, pp.G33-G36

    2008.04

  • Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex

    Min, BG, Yoo, JH, HYUNCHUL SOHN, DAE HONG KO,, mann-ho cho, Lee, TW

    Electrochemical and Solid State Letters, v.11, pp.H96-H98

    2008.02

  • Investigation of phase transition of Ge2Sb2Te5 and N-incorporated Ge2Sb2Te5 films using x-ray absorption spectroscopy

    Kim Y., Jang M.H., Jeong K., Cho M.-H., Do K.H., Ko D.-H., Sohn H.C., Kim M.G.

    Applied Physics Letters, v.92, pp.061910-160910

    2008.02

  • Effects of postnitridation annealing on band gap and band offsets of nitrided Hf-silicate films

    Chung K.B., Cho M.-H., Hwang U., Kang H.J., Suh D.C., Sohn H.C., Ko D.-H., Kim S.H., Jeon H.T.

    Applied Physics Letters, v.92, pp.022907-022907

    2008.01

  • Change in band alignment of Hf O2 films with annealing treatments

    Yim C.J., Ko D.-H., Jang M.H., Chung K.B., Cho M.-H., Jeon H.T.

    Applied Physics Letters, v.92, pp.012922-012922

    2008.01

  • Electronic structure of pentacene/ultrathin gate dielectric interfaces for low-voltage organic thin film transistors

    Cho S.W., Park D.S., Jang W.C., Cho M.-H., Yoo K.-H., Jeong K., Whang C.-N., Yi Y., Chung K.B.

    JOURNAL OF APPLIED PHYSICS, v.102, pp.064502-064502

    2007.09

  • 비 Si 기판을 이용한 차세대 반도체 소자 기술의 특징 및 발전 방향

    cho mann-ho, KO, DAE HONG, 손현철, 김형섭

    전자공학회지, v.34, no.7, pp.807-816

    2007.07