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Journal paper

  • Effects of N-2(+) ion implantation on phase transition in Ge2Sb2Te5 films

    Kim, Y, Baeck, JH, cho mann-ho, Jeong, EJ, DAE HONG KO

    JOURNAL OF APPLIED PHYSICS, v.100, pp.570-574

    2006.10

  • Temperature dependence of band alignments in ultrathin Hf-Al-O and Al2O3 films on p-Si (100)

    Jin, H, Oh, SK, Kang, HJ, Lee, YS, cho mann-ho

    SURFACE AND INTERFACE ANALYSIS, v.38, pp.502-505

    2006.09

  • Band gap and band offsets for ultrathin (HfO2)(x)(SiO2)(1-x) dielectric films on Si(100)

    Jin, H, Oh, SK, Kang, HJ, cho mann-ho

    APPLIED PHYSICS LETTERS, v.89, pp.122901-122901

    2006.09

  • Gate 절연막을 위한 고유전 박막 개발

    cho mann-ho

    세라미스트, v.9, no.4, pp.51

    2006.08

  • Formation of a Ge-rich layer during the oxidation of strained Si1-xGex

    Min, BG, Pae, YH, Jun, KS, KO, DAE HONG, Kim, H, cho mann-ho, Lee, TW

    JOURNAL OF APPLIED PHYSICS, v.100, pp.016102-016102

    2006.07

  • 차세대 비휘발성 메모리 소자를 위한 상변화 메모리 (Phase Change Memory) 기술의 특징 및 발전방향

    cho mann-ho

    전자공학회지, v.33, no.5, pp.516-524

    2006.05

  • Nitridation for HfO2 high-k films on Si by an NH3 annealing treatment

    cho mann-ho, Chung K.B., WHANG, Chung Nam, KO, DAE HONG, Lee J.H., Lee N.I.

    APPLIED PHYSICS LETTERS, v.88, no.20, pp.202902-202902

    2006.05

  • Phase separation of a Ge2Sb2Te5 alloy in the transition from an amorphous structure to crystalline structures

    Kim, Y, Park, SA, Baeck, JH, Noh, MK, JEONG KwangHo, cho mann-ho, Park, HM, Lee, MK, Jeong, EJ, KO, DAE HONG, Shin, HJ

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.24, pp.929-933

    2006.05

  • Physical and electrical characteristics of atomic-layer-deposited Hf-silicate thin films using Hf[N(CH3)(C2H5)](4) and SiH[N(CH3)(2)](3) precursors

    Chung KB, WHANG, Chung Nam, mann-ho cho, Yim CJ, DAE HONG KO,, Kim YS, Kim MJ, Lee JH, Lee NI

    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.48, no.4, pp.607-613

    2006.04

  • Change in depth profile of N highly incorporated into SiO2 by plasma-assisted nitridation

    Cho, MH, Chung, KB, Kim, YK, Kim, DC, Heo, JH, Koo, BY, Shin, YK, Chung, UI, Moon, JT, DAE HONG KO

    ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, pp.F27-F30

    2006.03