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Journal paper

  • Effect of ZrO2 incorporation into high dielectric Gd2O3 film grown on Si(111)

    Park, SA, Roh, YS, Kim, YK, Baeck, JH, Noh, M, Jeong, K, cho mann-ho, JEONG KwangHo, Joo, MK, Kim, TG, Song, JH, KO, DAE HONG

    JOURNAL OF APPLIED PHYSICS, v.98, pp.024906-024906

    2005.07

  • Investigation of the initial stage of growth of HfO2 films on Si(100) grown by atomic-layer deposition using in situ medium energy ion scattering

    Chang, HS, Hwang, H, cho mann-ho, Moon, DW

    APPLIED PHYSICS LETTERS, v.86, pp.031906-031906

    2005.01

  • Interfacial reaction depending on the stack structure of Al2O3 and HfO2 during film growth and postannealing

    Cho, MH, Chung, KB, Chang, HS, Moon, DW, Park, SA, Kim, YK, Jeong, K, Whang, CN, Lee, DW, Ko, DH, Doh, SJ, Lee, JH, Lee, NI

    APPLIED PHYSICS LETTERS, v.85, pp.4115-4117

    2004.11

  • Characterization of a pentacene thin-film transistor with a HfO2/Al2O3 gate insulator

    Kim HJ, Kang SJ, Park DS, Chung KB, M. Noh, Whang CN, cho mann-ho

    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, no.4, pp.935-938

    2004.10

  • Interfacial characteristics of HfO2 grown on nitrided Ge (100) substrates by atomic-layer deposition

    Kim, H, McIntyre, PC, Chui, CO, Saraswat, KC, cho mann-ho

    APPLIED PHYSICS LETTERS, v.85, pp.2902-2904

    2004.10

  • Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading

    Kwon, SY, cho mann-ho, Moon, P, Kim, HJ, Na, H, Seo, HC, Kim, HJ, Shin, Y, Moon, DW, Sun, Y, Cho, YH, Yoon, E

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.201, pp.2818-2822

    2004.09

  • Ultrathin gate oxide with a reduced transition layer grown by plasma-assisted oxidation

    Hyun, S, Buh, GH, Hong, SH, Koo, BY, Shin, YG, Jung, UI, Moon, JT, cho mann-ho, Chang, HS, Moon, DW

    APPLIED PHYSICS LETTERS, v.85, pp.988-990

    2004.08

  • Interfacial characteristics of N-incorporated HfAlO high-k thin films

    Cho M.-H., Moon D.W., Park S.A., Kim Y.K., Jeong K., Kang S.K., Ko D.-H., Doh S.J., Lee J.H., Lee N.I.

    APPLIED PHYSICS LETTERS, v.84, pp.5243-5245

    2004.06

  • Investigation of Ge profile on SiGe islands by scanning photoelectron microscopy

    Cho M.-H., Cho Y.J., Lee M.K., Park S.A., Roh Y.S., Kim Y.K., Jeong K., Kang S.K., Ko D.-H., Shin H.J., Kwon K.W.

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.22, pp.1012-1016

    2004.05

  • Evolution of tungsten-oxide whiskers synthesized by a rapid thermal-annealing treatment

    Cho M.-H., Park S.A., Yang K.-D., Lyo I.W., Jeong K., Kang S.K., Ko D.-H., Kwon K.W., Ku J.H., Choi S.Y., Shin H.J.

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.22, pp.1084-1087

    2004.05