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Journal paper

  • Electrical and physical properties of HfO2 deposited via ALD using Hf(OtBu)(4) and ozone atop Al2O3

    Chang, HS, Baek, SK, Park, H, Hwang, H, Oh, JH, Shin, WS, Yeo, JH, Hwang, KH, Nam, SW, Lee, HD, Song, CL, Moon, DW, cho mann-ho

    ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, pp.F42-F44

    2004.04

  • Interfacial characteristics of HfO2 films grown on strained Si0.7Ge0.3 by atomic-layer deposition

    cho mann-ho, Chang, HS, Moon, DW, Kang, SK, Min, BK, KO, DAE HONG, Kim, HS, McIntyre, PC, Lee, JH, Ku, JH, Lee, NI

    APPLIED PHYSICS LETTERS, v.84, pp.1171-1173

    2004.02

  • Enhanced thermal stability of high-dielectric Gd2O3 films using ZrO2 incorporation

    Cho, MH, Moon, DW, Park, SA, Rho, YS, Kim, YK, Jeong, K, Chang, CH, Gu, JH, Lee, JH, Choi, SY

    APPLIED PHYSICS LETTERS, v.84, pp.678-680

    2004.02

  • Thermal stability and decomposition of the HfO2-Al2O3 laminate system

    Hyo Sik Chang, Hwang, H, cho mann-ho, Moon, DW, Doh, SJ, Lee, JH, Lee, NI

    APPLIED PHYSICS LETTERS, v.84, pp.28-30

    2004.01

  • Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing

    Cho M.-H., Chang H.S., Cho Y.J., Moon D.W., Min K.-H., Sinclair R., Kang S.K., Ko D.-H., Lee J.H., Gu J.H., Lee N.I.

    SURFACE SCIENCE, v.554, pp.L75-L80

    2004.01

  • Change in the chemical state and thermal stability of HfO2 by the incorporation of Al2O3

    cho mann-ho, Chang HS, Cho YJ, Moon DW, Min KH, Sinclair R, Kang SK, KO, DAE HONG, Lee JH, Gu JH, Lee NI

    APPLIED PHYSICS LETTERS, v.84, no.4, pp.571-573

    2004.01

  • Atomic transport and stability during annealing of HfO2 and HfAlO with an ultrathin layer of SiO2 on Si(001)

    Chang, HS, Hwang, H, cho mann-ho, Kim, HK, Moon, DW

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.22, pp.165-169

    2004.01

  • Gd2O3:Eu3+ 형광체 박막의 결정성에 따른 발광특성 연구

    chomann-ho

    한국진공학회지, v.12, no.4, pp.275-280

    2003.12

  • Thermal stability of epitaxial Pt films on Y2O3 in a metal-oxide-Si structure

    mann-ho cho, Moon, DW, Min, KH, Sinclair, R, Park, SA, Kim, YK, KwangHo JEONG, Kang, SK, Ko, DH

    APPLIED PHYSICS LETTERS, v.83, pp.4758-4760

    2003.12

  • Interfacial reactions between WNx and poly Si1-xGex films

    Kang, SK, Min, BG, Kim, JJ, DAE HONG KO,, Kang, HB, Yang, CW, mann-ho cho

    JOURNAL OF APPLIED PHYSICS, v.94, pp.7071-7075

    2003.12