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Journal paper

  • Texture formation of GeSbTe thin films prepared by multilayer deposition of modulating constituent elements

    Ie S.Y., Bea B.T., Ahn Y.-K., Chang M.Y., You D.G., Cho M.H., Jeong K., Oh J.-H., Koh G.-H., Jeong H.

    APPLIED PHYSICS LETTERS, v.90, pp.251917-251917

    2007.06

  • The dielectric characteristics and thermal stability of Hf-silicate films with different Si contents

    Lee D., Suh D., Pae Y., Kim H., Cho M.-H., Ko D.-H.

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.154, pp.H708-H712

    2007.06

  • Characteristics of organic light emitting diodes with tetrakis(Ethylmethylamino) hafnium treated indium tin oxide

    Sohn S., Park K., Jung D., Kim H., Chae H., Kim H., Yi J., Cho M.-H., Boo J.-H.

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.46, pp.L461-L464

    2007.05

  • Changes in the electronic structures and optical band gap of GeGe2Sb2Te5 and N-doped Ge2Sb2Te5 during phase transition

    Kim Y., Jeong K., Cho M.-H., Hwang U., Jeong H.S., Kim K.

    APPLIED PHYSICS LETTERS, v.90, pp.171920-171920

    2007.04

  • Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition

    Kim, I, Kuk, S, Kim, S, Kim, J, Jeon, H, cho mann-ho, Chung, KB

    APPLIED PHYSICS LETTERS, v.90, pp.222101-222101

    2007.03

  • Change in electrical resistance and thermal stability of nitrogen incorporated Ge2Sb2Te5 films

    Kim, Y, Hwang, U, Cho, YJ, Park, HM, mann-ho cho, Cho, PS, Lee, JH

    APPLIED PHYSICS LETTERS, v.90, pp.233-236

    2007.01

  • Initial nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on Si surfaces with the various surface conditions using in situ medium energy ion scattering analysis

    Chung, KB, Chung Nam WHANG,, Chang, HS, Moon, DW, cho mann-ho

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.25, pp.141-147

    2007.01

  • Growth kinetics of atomic layer deposited Hf silicate-like films using Hf[N (CH3)(2)(C2H5](4) and SiH[N(CH3)(2)](3) precursors via an H2O oxidant

    Chung, KB, cho mann-ho, Moon, DW, Suh, DC, Ko, DH, Hwang, U, Kang, HJ

    ELECTROCHEMICAL AND SOLID STATE LETTERS, v.10, pp.G1-G4

    2007.01

  • Electronic structure and thermal stability of nitrided Hf silicate films using a direct N plasma

    cho mann-ho, Chung, KB, Moon, DW

    APPLIED PHYSICS LETTERS, v.89, pp.182908-182908

    2006.11

  • Change in phase separation and electronic structure of nitrided Hf-silicate films as a function of composition and post-nitridation anneal

    cho mann-ho, Chung, KB, KO, DAE HONG

    APPLIED PHYSICS LETTERS, v.89, pp.142908-142908

    2006.10